https://doi.org/10.1051/epjconf/202637701004
Power Factor Performance of MnF3 Monolayer Under Hubbard Correction
1 Department of Physics, Faculty of Mathematics and Natural Science, Universitas Negeri Jakarta, Jl. Rawamangun Muka, East Jakarta 13220, Indonesia
2 Institute of Microengineering and Nanoelectronics (IMEN) Universiti Kebangsaan Malaysia 43600 UKM Bangi, Selangor, Malaysia
* Corresponding author: This email address is being protected from spambots. You need JavaScript enabled to view it.
Published online: 2 July 2026
Abstract
The collinear density functional theory was used to obtain the electronic structure of MnF3 monolayer. We observed the Dirac half metallic properties from the band structures. The extracted data was used to compute the Seebeck coefficient as a thermopower and electrical conductivity, which were then used to calculate the power factor. As the Hubbard correction was applied, the band gap increases only in the spin-down channel, while the metallic state in the spin-up channel is robust. The consequence is that only the spin-up channel provides the contribution for thermoelectric properties, especially for the power factor. The improvement of power factor can be performed by carrier doping as represented by the chemical potential. This means that the carrier doping can control the quality of power factor.
© The Authors, published by EDP Sciences, 2026
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
