EPJ Web of Conferences 15, 03004 (2011)
https://doi.org/10.1051/epjconf/20111503004
https://doi.org/10.1051/epjconf/20111503004
Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures
Department of Low-Temperature Physics, Ural State University, 51, Lenin ave., Ekaterinburg, 620083, Russia
Electrical and thermoelectrical properties of amorphous chalcogenides Cu1-xAgxGeAsSe3 (x = 0.51.0) were examined in the temperature interval from 10 to 400 K at atmospheric pressure and at 300 K under pressures to 50 GPa. All the materials were found to exhibit ionic or mixed electronic-ionic conductivity
© Owned by the authors, published by EDP Sciences, 2011
