Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

V. Palumbo; M. Marchesi; V. Chiesi; D. Paci; P. Iuliano; F. Toia; F. Casoli; P. Ranzieri; F. Albertini; M. Morelli

doi:10.1051/epjconf/20134016002

EPJ

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Proceedings

Open Access

EPJ Web of Conferences 40, 16002 (2013)
https://doi.org/10.1051/epjconf/20134016002

Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

V. Palumbo¹, M. Marchesi¹, V. Chiesi², D. Paci¹, P. Iuliano¹, F. Toia¹, F. Casoli², P. Ranzieri², F. Albertini² and M. Morelli¹

¹ Smart Power Technology R&D, STMicroelectronics, Via C.Olivetti 2, 20041 Agrate Brianza ( MB), Italy
² Institute of Materials for Electronics and Magnetism (IMEM), CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy

Abstract

This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8” silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field H_c<10A/m and saturation magnetization (µ₀M_S) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

© Owned by the authors, published by EDP Sciences, 2013