https://doi.org/10.1051/epjconf/20134016002
Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator
1
Smart Power Technology R&D,
STMicroelectronics, Via C.Olivetti 2, 20041
Agrate Brianza
( MB),
Italy
2
Institute of Materials for Electronics and Magnetism
(IMEM), CNR, Parco
Area delle Scienze 37/A, 43124
Parma,
Italy
This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8” silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.
© Owned by the authors, published by EDP Sciences, 2013
