https://doi.org/10.1051/epjconf/20134102014
Strong-field-induced attosecond dynamics in SiO2
1 Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Str. 1, 85748 Garching, Germany
2 Department of Physics, Georgia State University, Atlanta, GA 30340, USA
3 Fakultät für Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München, Germany
4 Physik-Department, Technische Universität München, James-Franck-Str, 85748 Garching, Germany
Striking field-induced changes in the absorption near the Si L-edge of SiO2 exposed to a near-infrared laser field of several V/Å delivered by a few-cycle pulse are observed with sub-100 attosecond extreme ultraviolet pulses by means of attosecond transient absorption.
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