https://doi.org/10.1051/epjconf/20134104002
Transition from ballistic to drift motion in high-field transport in GaAs
1 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany
2 Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
3 Laboratoire Pierre Aigrain, École Normale Supérieure, 75231 Paris, France
With strong THz pulses, we measure ultrafast transport of electrons, holes, and an electron-hole plasma in GaAs. The transition from ballistic to drift-like transport is strongly influenced by electron-hole scattering.
© Owned by the authors, published by EDP Sciences, 2013
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
