Transition from ballistic to drift motion in high-field transport in GaAs
1 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany
2 Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
3 Laboratoire Pierre Aigrain, École Normale Supérieure, 75231 Paris, France
With strong THz pulses, we measure ultrafast transport of electrons, holes, and an electron-hole plasma in GaAs. The transition from ballistic to drift-like transport is strongly influenced by electron-hole scattering.
© Owned by the authors, published by EDP Sciences, 2013
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