https://doi.org/10.1051/epjconf/20134104004
Non-perturbative four-wave mixing in InSb with intense off-resonant multi-THz pulses
1 Department of Physics and Center for Applied Photonics, University of Konstanz, Universitätsstr. 10, 78464 Konstanz, Germany
2 Department of Physics, University of Regensburg, Universitätsstr. 31, 93053 Regensburg, Germany
High-field multi-THz pulses are employed to analyze the coherent nonlinear response of the narrow-gap semiconductor InSb which is driven off-resonantly. Field-resolved four-wave mixing signals manifest the onset of a non-perturbative regime of Rabi flopping at external amplitudes above 5 MV/cm per pulse. Simulations based on a two-level quantum system confirm these experimental results.
© Owned by the authors, published by EDP Sciences, 2013
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
