Non-perturbative four-wave mixing in InSb with intense off-resonant multi-THz pulses
1 Department of Physics and Center for Applied Photonics, University of Konstanz, Universitätsstr. 10, 78464 Konstanz, Germany
2 Department of Physics, University of Regensburg, Universitätsstr. 31, 93053 Regensburg, Germany
High-field multi-THz pulses are employed to analyze the coherent nonlinear response of the narrow-gap semiconductor InSb which is driven off-resonantly. Field-resolved four-wave mixing signals manifest the onset of a non-perturbative regime of Rabi flopping at external amplitudes above 5 MV/cm per pulse. Simulations based on a two-level quantum system confirm these experimental results.
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