https://doi.org/10.1051/epjconf/20134800002
Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy
1 Brno University of Technology,
Faculty of Electrical Engineering and Communication, Physics Department,
Technická 8, 61600
Brno, Czech
Republic
2 Moscow Institute of Physics and
Technology, 141700
Dolgoprudnyj, Russian
Federation
3 Dagestan State University, Physics
Department, 367025
Machachkala, Russian
Federation
The objective of the study is a growth of SiC/(SiC)1−x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1−x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
© Owned by the authors, published by EDP Sciences, 2013
