Development of new photon detection device for Cherenkov and fluorescence radiation
1 INFN, Sezione di Napoli, via Cintia 2, 80126 Napoli, Italy
2 CNR-SPIN U.O.S. di Napoli
3 Dipartimento di Scienze Fisiche, Università degli Studi di Napoli Federico II, via Cintia 2, 80126 Napoli, Italy
4 INFN, Sezione di Perugia e Dipartimento di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia, Italy
5 Dipartimento di Fisica, Università degli Studi di Roma Tor Vergata, via della Ricerca Scientifica 1, 00133 Roma, Italy
6 Dipartimento di Fisica, Università degli Studi dell'Aquila, via Vetoio 10, 67100 Coppito, L'Aquila, Italy
7 INFN, Sezione di Bari e Dipartimento di Fisica, Università degli Studi di Bari, via Amendola 173, 70126 Bari, Italy
Recent progress on the development of a new solid state detector allowed the use of finely pixelled photocathodes obtained from silicon semiconductors. SiPM detectors seem to be an ideal tool for the detection of Cherenkov and fluorescence light in spite of their not yet resolved criticism for operating temperature and intrinsic noise. The main disadvantage of SiPM in this case is the poor sensitivity in the wavelength range 300-400 nm, where the Cherenkov light and fluorescence radiation are generated. We report on the possibility to realize a new kind of pixelled photodetector based on the use of silicon substrate with carbon nanotube compounds, more sensitive to the near UV radiation. Also if at the very beginning, the development of such detector appears very promising and useful for astroparticle physics, both in the ground based arrays and in the space experiments. The detectors are ready to be operated in conditions of measurements without signal amplification.
© Owned by the authors, published by EDP Sciences, 2013
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.