https://doi.org/10.1051/epjconf/20135401017
Spectroscopic evidence of resonance energy transfer mechanism from PbS QDs to bulk silicon
1 School of Physics and Astronomy, University of Southampton - Southampton, UK
2 ICFO - Institut de Ciencies Fotoniques - Castelldefels, Barcelona, Spain
In this work, we study the efficiency of the resonance energy transfer from PbS quantum dots to bulk silicon. We present spectroscopic evidence that resonance energy transfer from PbS quantum dots to bulk silicon can be an efficient process for separation distances below 12 nm. Temperature measurements are also presented for PbS quantum dots deposited on glass and silicon with 5 nm and 20nm spacer thicknesses substrates. Our findings show that the resonance energy transfer efficiency remains constant over the 50K to 300K temperature range.
© Owned by the authors, published by EDP Sciences - SIF 2013
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
