https://doi.org/10.1051/epjconf/20158801013
Extracting information from partially depleted Si detectors with digital sampling electronics
1 Dipartimento di Fisica, Università di Firenze, Firenze, Italy
2 INFN, Sezione di Firenze, Firenze, Italy
3 LPC, IN2P3-CNRS, ENSICAEN and Université de Caen, France
4 IPN, CNRS/IN2P3, Université Paris Sud 11, Paris, France
5 GANIL, CEA/DSM-CNRS/IN2P3, Caen, France
6 INFN-LNL Legnaro (PD), Italy
7 Dep. de Fisica Aplicada, FCCEE Univ. de Huelva, Huelva, Spain
8 Heavy Ion Laboratory, University of Warsaw, Warsaw, Poland
9 Jagiellonian Univ., Institute of Nuclear Physics IFJ-PAN, Kraków, Poland
10 INFN, Sezione di Bologna and Università di Bologna, Italy
11 INFN, Sezione di Napoli, Napoli, Italy
12 NIPNE-HH, Măgurele-Bucharest, Romania
13 Dipartimento di Fisica, Università di Napoli “Federico II”, Napoli, Italy
14 INFN-LNS, Catania, Italy
Published online: 24 April 2015
A study of the identification properties and of the energy response of a Si-Si-CsI(Tl) ΔE-E telescope exploiting a partially depleted second Si stage has been performed. Five different bias voltages have been applied to the second stage of the telescope, one corresponding to full depletion, the others associated with a depleted layer ranging from 60% to 90% of the detector thickness. Fragment identification has been obtained using either the ΔE-E technique or the Pulse Shape Analysis (PSA). Charge collection efficiency has been evaluated. The ΔE-E performance is not affected by incomplete depletion. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds increase.
© Owned by the authors, published by EDP Sciences - SIF, 2015
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
