The dependence of surface temperature on IGBTs load and ambient temperature
Department of power engineering, University of Žilina, Univerzitna 8215/1, Žilina, Slovakia
Published online: 6 May 2015
Currently, older power electronics and electrotechnics are improvement and at the same time developing new and more efficient devices. These devices produce in their activities a significant part of the heat which, if not effectively drained, causing damage to these elements. In this case, it is important to develop new and more efficient cooling system. The most widespread of modern methods of cooling is the cooling by heat pipe. This contribution is aimed at cooling the insulated-gate bipolar transistor (IGBT) elements by loop heat pipe (LHP). IGBTs are very prone to damage due to high temperatures, and therefore is the important that the surface temperature was below 100°C. It was therefore created a model that examined what impact of surface temperature on the IGBT element and heat removal at different load and constant ambient temperature.
© Owned by the authors, published by EDP Sciences, 2015
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