https://doi.org/10.1051/epjconf/201713203053
An XPS method for layer profiling of NbN thin films
1 Moscow Power Engineering Institute, 111250 Moscow, Russia
2 Chalmers University of Technology, 41296 Göteborg, Sweden
* Corresponding author: LubenchenkoAV@mpei.ru
Published online: 13 December 2016
Layer chemical and phase profiling of niobium nitride thin films on a silicon substrate oxidized on air was performed with the help of a method designed by us. The method includes: a new method of background subtraction of multiple inelastically scattered photoelectrons considering depth inhomogeneity of electron inelastic scattering; a new method of photoelectron line decomposition into component peaks considering physical nature of different decomposition parameters; joint solution of the background subtraction and photoelectron line decomposition problems; control of line decomposition accuracy with the help of a suggested performance criterion; calculation of layer thicknesses for a multilayer target using a simple formula.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
