An XPS method for layer profiling of NbN thin films
1 Moscow Power Engineering Institute, 111250 Moscow, Russia
2 Chalmers University of Technology, 41296 Göteborg, Sweden
* Corresponding author: LubenchenkoAV@mpei.ru
Published online: 13 December 2016
Layer chemical and phase profiling of niobium nitride thin films on a silicon substrate oxidized on air was performed with the help of a method designed by us. The method includes: a new method of background subtraction of multiple inelastically scattered photoelectrons considering depth inhomogeneity of electron inelastic scattering; a new method of photoelectron line decomposition into component peaks considering physical nature of different decomposition parameters; joint solution of the background subtraction and photoelectron line decomposition problems; control of line decomposition accuracy with the help of a suggested performance criterion; calculation of layer thicknesses for a multilayer target using a simple formula.
© The Authors, published by EDP Sciences, 2017
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