Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs
1 Institute for Spectroscopy RAS, 108840 Moscow, Troitsk, Russia
2 Lebedev Physical Institute RAS, 119991 Moscow, Russia
3 Institute of Physics, Polish Academy of Sciences, PL-02668 Warsaw, Poland
* Corresponding author: firstname.lastname@example.org
Published online: 13 December 2016
Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied. Using dispersion analysis of reflectivity spectra plasmon and phonon parameters for the samples under study were obtained.
© The Authors, published by EDP Sciences, 2017
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