https://doi.org/10.1051/epjconf/201713302001
Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
1 Faculty of Mathematics and Natural Sciences, University of Rzeszow, 35-310 Rzeszow, Poland
2 Scientific Research Company “Carat”, 79031 Lviv, Ukraine
3 National Research Tomsk State University, 634050 Tomsk, Russia
4 Siberian Physical-Technical Institute TSU, 634050 Tomsk, Russia
* Corresponding author: i.izhnin@carat.electron.ua
Published online: 15 December 2016
Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
