https://doi.org/10.1051/epjconf/201716102022
The features of modelling semiconductor lasers with a wide contact
Lomonosov Moscow State University, Physics Department, Leninskie Gory, Moscow, 119991 Russia
* Corresponding author: rjanov@mail.ru
Published online: 31 October 2017
The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
