Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED
Semiconductor Photonics & Integrated Lightwave Systems (SPILS), School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Malaysia
2 Department of Electrical and Electronic Engineering, Faculty of Engineering, National Defence University of Malaysia (UPNM), Kem Sungai Besi, 57000 Kuala Lumpur
* Corresponding author: firstname.lastname@example.org
Published online: 22 November 2017
This work is dedicated to the study of InGaN based LED on the thickness variation effect. The operating voltage, total emission rate, efficiency droop and spontaneous recombination rate was improved by increasing the thickness of InGaN layer of InGaN/AlGaN electron blocking layer (EBL). Based on optical and electrical results, the thicker InGaN layer could have lower operating voltage and higher total emission rate. LED with 5nm thick InGaN layer also could prevent electron leakage into p-region and improve hole injection efficiency. As a result it decreases 60% of efficiency droops and reduces the trap assisted recombination in InGaN/AlGaN active light emitting region. This indicates that InGaN layer may decrease the non-radiative recombination
© The Authors, published by EDP Sciences, 2017
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