The influence of design parameters on the performance of FBAR in 10–14 GHz
School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus 02600 Arau, Perlis, Malaysia
2 School of Material Engineering, Universiti Malaysia Perlis, Jejawi Campus 02600 Arau, Perlis, Malaysia
* Corresponding author: email@example.com
Published online: 22 November 2017
This research presents the analysis of the influence of design parameters on the performance of film bilk acoustic wave resonator (FBAR) working from 10 GHz to 14 GHz. The analysis is done by implementing one-dimensional (1-D) modellings, which are 1-D Mason model and Butterworth Van Dyke (BVD) model. The physical parameters such as piezoelectric materials and its thickness, and size of area affecting the characteristics of the FBAR are analyzed in detail. Zinc oxide (ZnO) and aluminum nitride (AlN) are chosen as the piezoelectric materials. The resonance area is varied at 25μm×25μm to 35μm×35μm. From the analysis, it is found that as the frequency increases, the thickness of the piezoelectric material decreases. Meanwhile, the static capacitance increases as the frequency increases. It is also found that as the area increases, the electrical impedance and static capacitance also increases.
© The Authors, published by EDP Sciences, 2017
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