Development of Gating Foils To Inhibit Ion Feedback Using FPC Production Techniques
Fujikura Ltd., 1440 Mutsuzaki, Chiba 285-8550, Japan
2 Saga U., Saga 840-8502, Japan
3 High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan
a e-mail: email@example.com
Published online: 21 February 2018
Positive ion feedback from a gas amplification device to the drift region of the Time Projection Chamber for the ILC can deteriorate the position resolution. In order to inhibit the feedback ions, MPGD-based gating foils having good electron transmission have been developed to be used instead of the conventional wire gate. The gating foil needs to control the electric field locally in opening or closing the gate. The gating foil with a GEM (gas electron multiplier)-like structure has larger holes and smaller thickness than standard GEMs for gas amplification. It is known that the foil transmits over 80 % of electrons and blocks ions almost completely. We have developed the gating foils using flexible printed circuit (FPC) production techniques including an improved single-mask process. In this paper, we report on the production technique of 335 μm pitch, 12.5 μm thick gating foil with 80 % transmittance of electrons in ILC conditions.
© The Authors, published by EDP Sciences, 2018
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