Size effect in the electronic transport of thin films of Bi2Se3
M.N. Mikheev Institute of Metal Physics, UB RAS, 620137 Ekaterinburg, Russia
2 Ural Federal University, 620002 Ekaterinburg, Russia
3 National Cheng Kung University, Tainan, Taiwan
4 TU Wien Atominstitut, 1020 Vienna, Austria
* Corresponding author: email@example.com
Published online: 4 July 2018
Thin films of a topological insulator (TI) Bi2Se3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to “separate” the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section.
© The Authors, published by EDP Sciences, 2018
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