Investigation of InSb:Mn thin films magnetoresistance by I-V characteristics method
ILIT RAS – Branch of FSRC “Crystallography and Photonics” of RAS, Shatura, Russia
2 Kurnakov Institute of the general and inorganic chemistry of the RAS, Moscow, Russia
3 South – West State University, Kursk, Russia
* Corresponding author: email@example.com
Published online: 4 July 2018
We have investigated the effect of magnetoresistance in the thin films of InSb:Mn using the data of I-V curves. The thin films were produced by pulsed laser deposition (PLD) method from the InSb+MnSb composite alloy targets with the concentrations of MnSb to 20%. The temperature dependence of magnetoresistance of the films has been studied in the temperature range from 10K to 300K.
© The Authors, published by EDP Sciences, 2018
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