Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities

Leonid Oveshnikov; Leonid Morgun; Elena Nekhaeva; Vladimir Kulbachinskii; Boris Aronzon

doi:10.1051/epjconf/201818506007

Proceedings

Open Access

EPJ Web of Conferences 185, 06007 (2018)
https://doi.org/10.1051/epjconf/201818506007

Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities

Leonid Oveshnikov¹^,2^*, Leonid Morgun²^,3^,4, Elena Nekhaeva¹, Vladimir Kulbachinskii¹^,5 and Boris Aronzon¹^,2

¹ National Research Center "Kurchatov Institute", 123182 Moscow, Russia
² P.N. Lebedev Physical Institute RAS, 119991 Moscow, Russia
³ Moscow Institute of Physics and Technology, 141700 Dolgoprudnyi, Moscow Region, Russia
⁴ National Research University Higher School of Economics, 101000 Moscow, Russia
⁵ M.V. Lomonosov Moscow State University, 119991 Moscow, Russia

^* e-mail: Oveshln@gmail.com

Published online: 4 July 2018

Abstract

We have studied magnetoresistance and Hall effect of GaAs/In_xGa_1−xAs quantum wells with remote Mn impurity. Temperature and magnetic field dependencies of samples resistivity indicate several effects related to the magnetic subsystem. Shubnikov - de Haas oscillations indicate the presence of several types of regions in conduction channel with significantly different hole mobilities. We discussed the impact of magnetic impurities on quantum corrections to conductivity by comparing our results with the data for similar non-magnetic structures. Our results suggest that the presence of Mn atoms leads to the damping of quantum corrections in in the investigated structures.

© The Authors, published by EDP Sciences, 2018

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