Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures
Moscow Technological University, Moscow, Russia
2 Moscow State University, Moscow, Russia
3 Scientific and Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
* Corresponding author: firstname.lastname@example.org
Published online: 4 July 2018
The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.
© The Authors, published by EDP Sciences, 2018
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