https://doi.org/10.1051/epjconf/201819504006
Temporal stability and absolute composition issues in molecular beam epitaxy of AlGaAs/GaAs THz QCL
1
National Research Nuclear University «MEPhI», Moscow, Russia
2
V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia
Published online: 23 November 2018
This article has no abstract.
© The Authors, published by EDP Sciences, 2018
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