https://doi.org/10.1051/epjconf/201819506016
Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy
1
Tydex LLC, 16, Domostroitelnaya st., 194292, St. Petersburg, Russia
2
Samara University, 34, Moskovskoe shosse, Samara, 443086, Russian Federation
3
Image Processing Systems Institute of the Russian Academy of Sciences, 151, Molodogvardejskaya st., Samara, 443001, Russian Federation
Published online: 23 November 2018
This article has no abstract.
© The Authors, published by EDP Sciences, 2018
This is an open access article distributed under the terms of the Creative Commons Attribution License 4.0 (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.