Oxidation of ablated silicon during pulsed laser deposition in a background gas with different oxygen partial pressures
1 S.S. Kutateladze Institute of Thermophysics SB RAS, 630090, Lavrentyev ave. 1, Novosibirsk, Russia
2 Novosibirsk State University, 630090, Pirogova Str. 2, Novosibirsk, Russia
3 HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, 25241, Za Radnic′ 828, Doln′ Břežany, Czech Republic
* Corresponding author: firstname.lastname@example.org
Published online: 14 January 2019
We have analysed changes in the oxidation state of SiOx films produced by pulsed laser deposition in a background gas with different partial pressures of oxygen. The optical properties of the films in IR range are shown to be close to those of SiO2 while the total oxidation degree is considerably less than 2. It is suggested that the film consists of oxidized and unoxidized regions due to preferential oxidation of the periphery of the silicon ablation plume during expansion. These regions are overlapping in the film if the laser beam is scanned on the target.
© The Authors, published by EDP Sciences, 2019
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