https://doi.org/10.1051/epjconf/201919600039
Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films
1 Kutateladze Institute of Thermophysics SB RAS, 630090 Novosibirsk, Russia
2 Novosibirsk State University, 630090, Novosibirsk, Russia
3 Institute of Solid State Chemistry and Mechanochemistry SB RAS, 630128 Novosibirsk, Russia
* Corresponding author: zamchiy@gmail.com
Published online: 14 January 2019
Polycrystalline silicon (poly-Si) thin films were obtained by aluminium induced crystallisation of amorphous silicon suboxide (a-SiOx, x = 0.22) via annealing of a-SiO0.22/Al bilayer structures at 550 °C for 4 - 30 h. The a-SiO0.22/Al thickness ratio was approximately 1. According optical microscopy measurements, the crystallized fraction reached the saturation value of 85% after annealing for 20 h. The further increase in the annealing time didn’t lead to an increase in this value. X-ray diffraction measurements revealed that the formed poly-Si had a strong Si (111) preferred orientation.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
