Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films
1 Kutateladze Institute of Thermophysics SB RAS, 630090 Novosibirsk, Russia
2 Novosibirsk State University, 630090, Novosibirsk, Russia
3 Institute of Solid State Chemistry and Mechanochemistry SB RAS, 630128 Novosibirsk, Russia
* Corresponding author: firstname.lastname@example.org
Published online: 14 January 2019
Polycrystalline silicon (poly-Si) thin films were obtained by aluminium induced crystallisation of amorphous silicon suboxide (a-SiOx, x = 0.22) via annealing of a-SiO0.22/Al bilayer structures at 550 °C for 4 - 30 h. The a-SiO0.22/Al thickness ratio was approximately 1. According optical microscopy measurements, the crystallized fraction reached the saturation value of 85% after annealing for 20 h. The further increase in the annealing time didn’t lead to an increase in this value. X-ray diffraction measurements revealed that the formed poly-Si had a strong Si (111) preferred orientation.
© The Authors, published by EDP Sciences, 2019
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