Ultrafast carrier generation in Bi1-xSbx thin films induced by intense monocycle terahertz pulses
1 Department of Physics, Graduate School of Engineering Science, Yokohama National University, Yokohama 240-8501, Japan
2 Graduate School of Technology, Industrial and Social Sciences, Tokushima University, Tokushima 770-8506, Japan
3 International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan
4 CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
5 LxRay Co. Ltd., Nishinomiya 663-8172, Japan
6 Department of Applied Physics, National Defense Academy, Yokosuka 239-8686, Japan
* Corresponding author: email@example.com
Published online: 16 April 2019
Using terahertz-pump and terahertz-probe spectroscopy, we investigated terahertz-induced carrier generation processes in Bi1-xSbx thin films. The field dependence of the terahertz-induced transmittance change indicates distinct nonlinearity related to the Zener tunneling in narrow band-gap materials.
© The Authors, published by EDP Sciences, 2019
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