Ultrafast carrier generation in Bi1-xSbx thin films induced by intense monocycle terahertz pulses

Ikufumi Katayama; Hiroki Kawakami; Kotaro Araki; Yusuke Arashida; Yasuo Minami; Lie-Wei Nien; Orjan Sele Handegard; Tadaaki Nagao; Masahiro Kitajima; Jun Takeda

doi:10.1051/epjconf/201920504016

Proceedings

Open Access

EPJ Web of Conferences 205, 04016 (2019)
https://doi.org/10.1051/epjconf/201920504016

Ultrafast carrier generation in Bi_1-xSb_x thin films induced by intense monocycle terahertz pulses

Ikufumi Katayama¹^*, Hiroki Kawakami¹, Kotaro Araki¹, Yusuke Arashida¹, Yasuo Minami¹^,2, Lie-Wei Nien³, Orjan Sele Handegard³, Tadaaki Nagao³^,4, Masahiro Kitajima¹^,3^,5^,6 and Jun Takeda¹

¹ Department of Physics, Graduate School of Engineering Science, Yokohama National University, Yokohama 240-8501, Japan
² Graduate School of Technology, Industrial and Social Sciences, Tokushima University, Tokushima 770-8506, Japan
³ International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan
⁴ CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
⁵ LxRay Co. Ltd., Nishinomiya 663-8172, Japan
⁶ Department of Applied Physics, National Defense Academy, Yokosuka 239-8686, Japan

^* Corresponding author: katayama-ikufumi-bm@ynu.ac.jp

Published online: 16 April 2019

Abstract

Using terahertz-pump and terahertz-probe spectroscopy, we investigated terahertz-induced carrier generation processes in Bi_1-xSb_x thin films. The field dependence of the terahertz-induced transmittance change indicates distinct nonlinearity related to the Zener tunneling in narrow band-gap materials.

© The Authors, published by EDP Sciences, 2019

This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.