Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform
Moscow State Pedagogical University, 119991 Moscow, Russia
2 Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, 420029 Kazan, Russia
3 National Research University Higher School of Economics, 101000 Moscow, Russia
Published online: 25 October 2019
In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
© The Authors, published by EDP Sciences, 2019
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