https://doi.org/10.1051/epjconf/201922003027
Self-injection locking of a laser diode to a high-Q silicon WGM microresonator
1
Russian Quantum Center, 121205 Moscow, Russia
2
Lomonosov MSU, Faculty of Physics, 119991 Moscow, Russia
3
Moscow institute of physics and technologies, 141701 Dolgoprudny, Moscow region, Russia
* Corresponding author: Shartev@gmail.com
Published online: 25 October 2019
The key properties of the self-injection locking regime of a laser diode to a high-Q microresonator with whispering gallery mode made of crystalline silicon are considered. It has been experimentally demonstrated the possibility of the self-injection locking using cavity made of crystalline silicon. This result opens up new possibilities for creating narrow-band highly stable laser sources in midIR, over 2.3 microns, on a new hardware base.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
