Self-injection locking of a laser diode to a high-Q silicon WGM microresonator
Russian Quantum Center, 121205 Moscow, Russia
2 Lomonosov MSU, Faculty of Physics, 119991 Moscow, Russia
3 Moscow institute of physics and technologies, 141701 Dolgoprudny, Moscow region, Russia
* Corresponding author: Shartev@gmail.com
Published online: 25 October 2019
The key properties of the self-injection locking regime of a laser diode to a high-Q microresonator with whispering gallery mode made of crystalline silicon are considered. It has been experimentally demonstrated the possibility of the self-injection locking using cavity made of crystalline silicon. This result opens up new possibilities for creating narrow-band highly stable laser sources in midIR, over 2.3 microns, on a new hardware base.
© The Authors, published by EDP Sciences, 2019
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