https://doi.org/10.1051/epjconf/201922202013
Micro alloying of SiC by radioisotope
1
Samara University,
Samara,
Russia
2
Physical-Technical Institute of SPA “Physics-Sun”,
Tashkent,
Uzbekistan
* e-mail: malina-jun@yandex.ru
** e-mail: mvdolg@yandex.ru
*** e-mail: a-gurska@yandex.ru
**** e-mail: chvi44@yandex.ru
† e-mail: vaksa22@gmail.com
‡ e-mail: rsafti@mail.ru
Published online: 19 November 2019
The endotaxia is the process of growth of one crystal structure inside the volume of another. In this case we are talking about the formation of the Silicon Carbide film in the Silicon substrate. The Silicon substrate is placed in the gas chamber. The sample is exposed to the stream of methane gas CH4 at temperature of 1360 - 1380 ◦C and at normal pressure. Moreover, gas contains both the stable Carbon isotope C12 and the radioactive Carbon isotope C14, and hydrogen H2 in the gas acts as a carrier of Carbon.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
