https://doi.org/10.1051/epjconf/202022507004
Application of CdZnTe Quasi-Hemispherical Detectors in Strong Gamma-Radiation Fields
ZRF RITEC SIA,
Riga,
Latvia
a.loutchanski@ritec.lv
v.fjodorof@ritec.lv
v.ivanov@ritec.lv
v.ogorodnik@ritec.lv
Published online: 20 January 2020
The results of a study of some ways to improve spectroscopy characteristics of the CdZnTe quasi-hemispherical detectors when working in high gamma radiation fluxes are presented. It was shown that the use of IR illumination with a wavelength of 1050 nm or 1200 nm or at slight warm-up of the detector to +30°C … +40°C can significantly improve spectroscopy performance of the CdZnTe detectors of size 3.5 mm × 3.5 mm × 1.75 mm when operating in a tested gamma-radiation field with a dose rate up to 590 mGy/h.
Key words: CdZnTe (CZT) / gamma-radiation detectors / semiconductor radiation detectors / room temperature semiconductor detectors / infra-red (IR) illumination / IR LED / high flux gamma-radiation / leakage current / voltage-current characteristic
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
