Study of 14N(ρ,γ)15O resonance reaction at Eplab= 278 keV
‘Saha Institute of Nuclear Physics HBNI, 1/AF Bidhannagar, Kolkata - 700 064, India
2 Indian Institute of Engineering Science and Technology, Shibpur, Howrah - 711 103, India
3 Tata Institute of Fundamental Research, Colaba, Mumbai - 400 005, India
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Published online: 14 January 2020
An implanted target (14N on Ta) is prepared and characterized via surface and bulk characterization processes. The depth profile of the implanted ions is obtained experimentally by populating a narrow resonance state of 15O through 14N(ρ,γ) reaction induced with a laboratory proton energy of 278 keV. The experimental profile is then compared with devoted simulations to under- stand the locations of the implantated ions in the lattice structure. Later, the lifetimes of a few excited states of 15O, relevant for applications in astrophys- ical scenario, have been determined using Doppler Shift Attenuation Method(DSAM).
© The Authors, published by EDP Sciences, 2020
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