https://doi.org/10.1051/epjconf/202023301001
Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators
1 CFisUC, Department of Physics, University of Coimbra, P-3004-516 Coimbra, Portugal
2 C²TN, DECN, Instituto Superior Técnico, University of Lisbon, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal
3 Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, D-01187 Dresden, Germany
* Corresponding author: jap@fis.uc.pt
Published online: 16 April 2020
Quantum effects such as weak-antilocalisation (WAL) behavior and Shubnikov-de Haas (SdH) oscillations in the electrical transport properties of topological insulators, measured on nanostructured polycrystalline samples and single-crystals of a series of bismuth chalcogenide compounds (Bi2(SexTe1-x)3, 0 ≤ x ≤ 1 and BiSbTe3), are presented and discussed.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.