Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators
1 CFisUC, Department of Physics, University of Coimbra, P-3004-516 Coimbra, Portugal
2 C²TN, DECN, Instituto Superior Técnico, University of Lisbon, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal
3 Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, D-01187 Dresden, Germany
* Corresponding author: email@example.com
Published online: 16 April 2020
Quantum effects such as weak-antilocalisation (WAL) behavior and Shubnikov-de Haas (SdH) oscillations in the electrical transport properties of topological insulators, measured on nanostructured polycrystalline samples and single-crystals of a series of bismuth chalcogenide compounds (Bi2(SexTe1-x)3, 0 ≤ x ≤ 1 and BiSbTe3), are presented and discussed.
© The Authors, published by EDP Sciences, 2020
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