https://doi.org/10.1051/epjconf/202023303006
Terahertz Frequency Comb in Graphene Field-Effect Transistors
1 Instituto de Plasmas e Fusão Nuclear, 1049-001 Lisboa, Portugal
2 Instituto Superior Técnico, 1049-001 Lisboa, Portugal
* Corresponding author: pedro.cosme.e.silva@tecnico.ulisboa.pt
Published online: 16 April 2020
Graphene Field-effect transistors (GFETs) are excellent candidates for all-electric, low-power radiation sources and detectors based on integrated circuit technology. In this work, we show that a hydrodynamic instability can be ex¬plored (the Dyakonov–Shur instability) to excite the graphene plasmons. The instability can be sustained with the help of a source-to-drain current and con¬trolled with the gate voltage. It is shown that the plasmons radiate a frequency comb in the Terahertz (THz) range. It is argued how this can pave the stage for a new generation of low power THz sources in integrated-circuit technology.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
