https://doi.org/10.1051/epjconf/202023812004
Crystallization of HfO2 thin films and their influence on laser induced damage
1 RhySearch, Optical Coatings Department, 9471 Buchs SG, Switzerland
2 Empa, Center for X-ray Analytics, 8600 Dübendorf ZH, Switzerland
* Corresponding author: zoltan.balogh@rhysearch.ch
Published online: 20 August 2020
We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
