https://doi.org/10.1051/epjconf/202125501002
Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
1 Dept. Multimedia and Information-Communication Technologies, University of Žilina,, 01026 Žilina, Slovakia
2 UniversitéParis-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
3 University Grenoble Alpes and CEA, LETI, 38054 Grenoble, France
4 STMicroelectronics, Silicon Technology Development, 38923 Crolles, France
* Corresponding author: daniel.benedikovic@c2n.upsaclay.fr & daniel.benedikovic@uniza.sk
Published online: 18 November 2021
Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.
© The Authors, published by EDP Sciences, 2021
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
