https://doi.org/10.1051/epjconf/202125505003
Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
1 Politecnico di Milano, Department of Physics, Piazza Leonardo da Vinci, 32, 20133, Milano, Italy
2 CNST@PoliMi, Istituto Italiano di Tecnologia (IIT), Via Giovanni Pascoli 70/3, Milano, Italy
3 IFN-CNR CSMFO Laboratory and FBK Photonics Unit, Via alla Cascata 56/C Povo 38100 Trento, Italy
4 Fondazione Bruno Kessler (FBK)—Centro Materiali e Microsistemi (CMM), Via alla Cascata 56/C, 38123 Trento, Italy
5 Dipartimento di Chimica, Materiali e Ingegneria Chimica "Giulio Natta", Politecnico di Milano, Piazza L. da Vinci, 32 20133 Milano, Italy
6 Institute for Photonics and Nanotechnologies (IFN)—National Research Council (CNR), Piazza L. da Vinci, 32 20133 Milano, Italy
* Corresponding author: hao.chen@polimi.it
Published online: 18 November 2021
Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.
© The Authors, published by EDP Sciences, 2021
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
