https://doi.org/10.1051/epjconf/202125510003
Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
1 Faculty of Electrical Engineering, Helmut Schmidt University, 22043, Hamburg, Germany
2 Institut für Laser-Physik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany
3 The Hamburg Center for Ultrafast Imaging, Luruper Chaussee 149, 22761, Hamburg, Germany
4 Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489, Berlin, Germany
* Corresponding author: hassek@hsu-hh.de
Published online: 18 November 2021
We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.
© The Authors, published by EDP Sciences, 2021
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
