https://doi.org/10.1051/epjconf/202226601011
III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm
1 School of Physics and Astronomy, University of Southampton, Southampton, SO17 1BJ
2 Aquark Technologies, Abbey Enterprise Centre Premier Way, Abbey Park Industrial Estate, Romsey, SO51 9AQ
3 School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS
4 Twenty-One Semiconductors GmbH, Kiefernweg 4, 72654 Neckartenzlingen, Germany
5 Zepler Institute, University of Southampton, Southampton, SO17 1BJ
6 Institute for Semiconductor Optics and Functional Interfaces, University of Stuttgart, 70569 Stuttgart, Germany
* Corresponding author: scr1n19@soton.ac.uk
Published online: 13 October 2022
We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.
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