https://doi.org/10.1051/epjconf/202226608010
Spontaneous Parametric Down-Conversion from GaAs Nanowires at Telecom Wavelength
1 ETH Zuerich, Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, 8093 Zuerich, Switzerland
2 University of Technology Sydney, School of Mathematical and Physical Sciences, Ultimo NSW 2007, Australia
3 Univ. Lyon, CNRS, ECL, INSA Lyon, UCBL, CPE Lyon, INL, UMR 5270, 69130 Ecully, France
* Corresponding author: gsaerens@ethz.ch
Published online: 13 October 2022
We report on the generation of photon pairs at 1550 nm from free-standing epitaxially grown self-assisted micrometre long GaAs nanowires. The efficiency of the spontaneous parametric down-conversion process has a rate of 320 GHz/Wm normalized to the transmission of the setup, the pump intensity, and the volume of the nanostructure. GaAs is a high index dielectric that can support electromagnetic Mie modes, therefore we model how shorter nanowires could improve the second-harmonic signal and we found that sub-micro long nanowires (600 nm length and 250 nm diameter) can support quality factors up to 15 at the pump wavelength (780 nm). We anticipate that the near field enhancement compared to micrometre long nanowires will boost the second-harmonic generation and, correspondingly, the biphoton rate efficiency.
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