https://doi.org/10.1051/epjconf/202226610001
Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
Bundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial Chemistry, D-12203, Unter den Eichen 44 - 46, Berlin, Germany
* Corresponding author: elena.ermilova@bam.de
Published online: 13 October 2022
Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties.
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