https://doi.org/10.1051/epjconf/202328704003
Direct observation of infrared electroluminescence of high mobility graphene field-effect transistors
1 Institut Langevin, ESPCI Paris, Université PSL, CNRS, 1, rue Jussieu, 75005 Paris, France
2 Laboratoire de physique de l’ENS, 24, rue Lhomond, 75005 Paris, France
3 DOTA, ONERA, 6, chemin de la Vauve aux Granges, 91123 Palaiseau, France
* e-mail: sylvio.rossetti@espci.fr
Published online: 18 October 2023
In this presentation we will discuss our efforts based on high sensitivity infrared microscopy and spectroscopy to unravel the origin of super-incandescent emission of high-mobility graphene transistors.
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
