https://doi.org/10.1051/epjconf/202328705014
Probing buried interfaces in SiOxNy thin films via ultrafast acoustics: The role transducing layer thickness
Institute of Plasma Physics of the Czech Academy of Science, Za Slovankou 1782/3, 182 00 Prague 8 - Liben, Czech Republic
* Corresponding author: zidek@ipp.cas.cz
Published online: 18 October 2023
Probing buried interfaces in thin films is a crucial task in many fields, including optical coating. Ultrafast acoustics provide a means to characterize the interfaces by using an acoustic wave localized on the nanometer scale. We provide a brief overview of our thorough study of the interface between SiOxNy thin films and Si substrate by using both single-color and broadband picosecond acoustics. The experiment allows us to track the effect of stoichiometry on the acoustics wave propagation and transition over the layer-substrate interface. To optimize the experiment, we also created simulations to study the effect of optoacoustic layer thickness. We show that the used Ti layer features an optimum thickness between 5-10 nm to reveal details of the interface properties.
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
