https://doi.org/10.1051/epjconf/202328705037
Liquid Phase Epitaxy growth and luminescence of Terbium-doped Gd3Ga5O12 crystalline layers
1 Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CEA-CNRS-ENSICAEN, Université de Caen Normandie, 6 Boulevard Maréchal Juin, 14050 Caen, France
2 European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, 38043 Grenoble, France
* Corresponding author: amandine.baillard@ensicaen.fr
Published online: 18 October 2023
Tb3+-doped single-crystalline Gd3Ga5O12 layers are grown by Liquid Phase Epitaxy on (111)-oriented undoped substrates, and their structure, composition, morphology and photo- and radioluminescence are studied. Layers doped with 6 at.% Tb3+ with a thickness up to 20 μm appear promising for single crystal film scintillators with a sub-μm spatial resolution and waveguide lasers as they exhibit good quality, uniform distribution of Tb3+ ions, optimized light output (~50% of that for Ce:YAG), weak concentration quenching of luminescence and low afterglow for a 15 bit dynamic range.
© The Authors, published by EDP Sciences, 2023
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