https://doi.org/10.1051/epjconf/202328705042
β-Ga2O3 Deposited via MOCVD for Mid-Infrared Polarization Control
1 Department of Basic and Applied Sciences for Engineering, Sapienza, University of Rome, Via A. Scarpa 16, 00161, Roma, Italy
2 Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
* Corresponding author: daniele.ceneda@uniroma1.it
Published online: 18 October 2023
We performed infrared optical characterization of polycrystalline β-Ga2O3 films, in the 10-18 μm range, deposited by metal organic chemical vapor deposition on sapphire substrates. Our results show that it is possible to obtain a dominant β-phase film, with a well-defined, normal to surface z-axis orientation. These results are confirmed by reflection spectra performed at 45° incidence angle which reveals a z-phonon Reststrahlen band as a function of the incident field linear polarization.
© The Authors, published by EDP Sciences, 2023
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