https://doi.org/10.1051/epjconf/202328714002
Tuning mid-infrared polarization sensitive reflectivity in GaN/AlGaN heterostructures
1 Department of Basic and Applied Sciences for Engineering, Sapienza Università di Roma, Via Scarpa 16, 00161, Rome, Italy.
2 CNR NANOTEC Institute of Nanotechnology, Via Monteroni, 73100, Lecce, Italy.
* Corresponding author: alessandro.bile@uniroma1.it
Published online: 18 October 2023
We present narrow-band polarization-sensitive reflectance of GaN/AlGaN heterostructures in the mid-infrared range. Experimental measurements performed at 15° angle of incidence show the excitation of a Berreman mode at the interface between GaN and sapphire substrate. A transfer matrix method for anisotropic layers has been used to analyze the obtained results. The contribution of the two-dimensional electron gas at the interfaces of the heterostructures has been included by proper modelization of an effective thin layer.
© The Authors, published by EDP Sciences, 2023
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