https://doi.org/10.1051/epjconf/202328810020
Semiconductor-based diodes for tritium detection
1 SiClade Technologies, 2013 Chemin des Ratonneaux, 13680 Lançon-Provence, France
2 Magdala, 1641 RN8, 13400 Aubagne, France
3 Aix-Marseille Univ., Université de Toulon, CNRS, IM2NP, Marseille, France
* paul.eymeoud@siclade-technologies.com
Published online: 21 November 2023
In order to plan an experimental betavoltaic detection process of tritium using 4H-SiC diodes, we have performed a preliminary numerical Monte-Carlo investigation. In a first part, by evaluating the transparency of several materials to the electrons produced by tritium decay, we have shed light on: (i) the necessity to place the detection diode in close neighborhood of the tritiated sample (less than 1mm distance) or to work in vacuum, (ii) the importance to use very thin coating layers (less than 0.1μm), containing low density materials, (iii) the strong screening effect of 4H-SiC (0.4μm thickness of 4H-SiC divides the intensity flux by 4). In a second part, we have built a deposition energy cartography in PIN and Schottky diodes, confirming that the upstream surface part of the diode (less than 0.5μm depth layers) will constitute the detection region.
Key words: Silicon carbide / tritium detection
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
