https://doi.org/10.1051/epjconf/202430908005
Hybrid III-V/Silicon photonic circuits embedding generation and routing of entangled photon pairs
1 Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, 75013 Paris, France
2 Centre de Nanosciences et Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
3 STMicroelectronics, Technology & Design Platform, 38920 Crolles, France
4 Institut de Physique de Nice, Université Côte d’Azur, Sophia Antipolis, France
* e-mail: lorenzo.lazzari@u-paris.fr
Published online: 31 October 2024
Hybrid photonic devices, harnessing the advantages of multiple materials while mitigating their respective weaknesses, represent a promising solution to the effective on-chip integration of generation and manipulation of non-classical states of light encoding quantum information. We demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al-GaAs source and their subsequent routing to a silicon-on-insulator circuitry. This enables the on-chip generation of broadband telecom photon pairs by type 0 and type 2 SPDC from the hybrid device, at room temperature and with strong rejection of the pump beam. Two-photon interference with 92% visibility proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications.
© The Authors, published by EDP Sciences, 2024
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
