https://doi.org/10.1051/epjconf/202532501005
Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices
Department of Basic Science & Humanities, University of Engineering & Management, West Bengal, India
* Corresponding author: emonadatta123@gmail.com
Published online: 5 May 2025
This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET. For this, a numerical device simulator has been applied. Our investigation discloses that JL device shows best performance for both cases.
© The Authors, published by EDP Sciences, 2025
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
