https://doi.org/10.1051/epjconf/202532603002
Theoretical modeling of magneto-Conductivity (MC) in dilute p-Si/SiGe/Si under magnetic fields
Laboratory of Energetic Engineering and Materials, Faculty of Sciences Ibn Tofail, BP 14000 Kenitra, Morocco.
* Corresponding author: hamza.mabchour1@uit.ac.ma
Published online: 21 May 2025
In the present work, we consider magneto-conductivity behavior within a two-dimensional p-Si/SiGe/Si system. A theoretical model of magneto-conductivity with three important contributions is derived, namely, an account for the weak localization process, for electron-electron interaction effects, and for the Zeeman effect, which is taken into account only if a magnetic field is present. Further, theoretical values predicted by our model are compared with experimental magneto-conductivity values for a comparison of similarity and difference with experimental values. In our research, experimental data for p-Si/SiGe/Si were used, which has been previously collected by I. L. Drichko et al. [1] for supporting purposes.
© The Authors, published by EDP Sciences, 2025
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